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| SHINDENGEN Super Fast Recovery Rectifiers Single D30L60 600V 30A FEATURES *oe Low OUTLINE DIMENSIONS Case : ITO-3P Unit : mm noise *oe trr150ns *oe Fully Isolated Molding APPLICATION *oe Switching power supply *oe Free Wheel *oe Home Appliances, Office Equipment *oe Factory Automation RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Storage Temperature Tstg -55*150 Operating Junction Temperature Tj 150 Maximum Reverse Voltage V RM 600 Average Rectified Forward Current 50Hz sine wave, R-load, Tc=85*Z IO 30 Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z IFSM 600 Dielectric Strength Vdis Terminals to case, AC 1 minute 1.5 Mounting Torque TOR (Recommended torque*0.5Nm) F 0.8 *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Forward Voltage V IF F =30A, Pulse measurement Reverse Current IR V=V Pulse measurement R RM, Reverse Recovery Time =0.5A, *@I =1.0A trr IF R Thermal Resistance AEjc Junction to case Unit *Z *Z V A A kV Nm Ratings Unit Max.1.5 V Max.25 EA MAX.150 ns Max.1.4 *Z/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D30L60 100 Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.4 0.8 1.2 1.6 2 2.4 2.8 Forward Voltage VF [V] D30L60 60 Forward Power Dissipation D=0.8 DC Forward Power Dissipation PF [W] 50 0.3 0.2 40 0.05 30 0.1 SIN 0.5 20 10 0 0 10 20 30 40 50 Average Rectified Forward Current IO [A] Tj = 150C 0 IO tp D=tp /T T D30L60 60 Derating Curve Average Rectified Forward Current IO [A] 50 DC D=0.8 40 0.5 30 SIN 0.3 0.2 20 0.1 10 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = VRM 0 0 IO VR tp D=tp /T T D30L60 800 Peak Surge Forward Capability IFSM 700 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 600 non-repetitive, sine wave, Tj=25C before surge current is applied 500 400 300 200 100 0 1 2 5 10 20 50 100 Number of Cycles [cycles] D30L60 Junction Capacitance f=1MHz Tc=25C TYP per diode Junction Capacitance Cj [pF] 1000 100 1 10 100 Reverse Voltage VR [V] |
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